In the diffusion furnace the phosphorous atoms which were deposited in the upstream process, are now embedded in the surface of the wafer. This releases mobile electrons in the wafer, which are later responsible for transporting the charge. An even distribution of temperature in the diffusion furnace ensures a homogenous resistance of the layer. The diffusion zone is free of metal and prevents metal atoms becoming embedded.

Inline system for generating the emitter

• Metal-free diffusion zone
• Homogenous distribution of temperature via special lamp control
• No water cooling required
• Very short cooling area, required only for the wafers
• Digital monitoring of incoming and outgoing air