For edge isolation of solar cells the n-doped silicon layer is trenched in order to achieve an electrical isolation and hereby to avoid any short circuits. The optical system of the LTM 2000 steers the laser beam precisely close to the wafer's edge, thus providing a large active cell area.

Inline system for laser-based edge isolation or structuring of solar cells

• High throughput
• Extremely low breakage rate
• High uptime
• Increased cell efficiency due to improved electrical insulation
• Permanent process control due to comprehensive monitoring of process parameter
• Precise outline detection of each wafer via camera system
• Versatile production options for different wafer sizes
• No prealignment of input wafers on the feed belt necessary
• Internal automation via pick-and-place robot
• Precise placement (position and rotation, incl. multi-track synchronisation) of wafers on outgoing track.
• Up to five lines of incoming / outgoing wafers
• Different amount of ingoing and outgoing lines possible: automatic internal resorting