During the annealing process (tempering) in the manufacture of the CIS/CIGS absorber, an accumulation of excess CuS is formed, which must be removed. This is removed by etching with a KCN solution.

Inline system for the removal of excess CuS

• Effective and safe removal of the excess CuS using precisely adjusted and controlled process parameters.
• Consistent processing results are achieved by optimal process guidance and optimal distribution of the etching medium on the substrate surface.
• Critical concentrations of cyanide gas are avoided by continually controlling the bath and triggering emergency reactions when critical process parameters are registered.
• Processing of the glass substrate and foils with a high rate of process safety and system availability.